Research Associate - Next Generation GaN Devices
Cardiff University
Advert
Research Associate - In the area of Next Generation GaN Devices Technology Development
Cardiff School of Engineering
This role involves conducting research in the area of GaN electronic device technology development using state-of-the-art nano and micro engineering techniques and contribute to the overall research performance of the School and University, carrying out research leading to the publishing of high-quality research. To pursue excellence in research and to inspire others to do the same using Gallium Nitride RF technology platforms developed by the Centre of High Frequency Engineering (CHFE), within the School of Engineering at Cardiff University. Specifically, the role will involve the implementation, development and enhancement of electronic GaN device fabrication processes using micro- and nano-fabrication modules in the recently opened state-of-the-art Institute for Compound Semiconductors (ICS) cleanroom facility https://www.cardiff.ac.uk/institute-compound-semiconductors/industry/facilities . The role will also involve the interaction with the RF GaN characterisation and circuit design teams within Cardiff and with project partners.
This post is full time (35 hours per week) and fixed term until 20 November 2027.
Salary: £40,247 - £45,163 per annum (Grade 6). It is not expected that an appointment be made above £40,247 per annum, Point 32.
For informal enquiries about the post please contact Prof. Khaled Elgaid (ElgaidK@cardiff.ac.uk)
For further details about working at Cardiff School of Engineering please contact Bev Jones Enginadmin@cardiff.ac.uk
Date advert posted: Wednesday, 13 November 2024
Closing date: Wednesday, 27 November 2024
The School of Engineering holds an Athena SWAN Bronze Award that recognises good employment practice and a commitment to develop the careers of women working in science. Cardiff University is an equal opportunities employer and positively encourages applications from suitably qualified and eligible candidates regardless of sex, race, disability, age, sexual orientation, gender reassignment, religion or belief, marital status, or pregnancy and maternity. For this vacancy we actively encourage women to apply. We will also consider proposals for flexible working or job share opportunities.
Please be aware that Cardiff University reserves the right to close this vacancy early should sufficient applications be received.
Cardiff University is committed to supporting and promoting equality and diversity and to creating an inclusive working environment. We believe this can be achieved through attracting, developing, and retaining a diverse range of staff from many different backgrounds. We therefore welcome applicants from all sections of the community regardless of sex, ethnicity, disability, sexual orientation, trans identity, relationship status, religion or belief, caring responsibilities, or age. In supporting our employees to achieve a balance between their work and their personal lives, we will also consider proposals for flexible working or job share arrangements.
Applications may be submitted in Welsh, and an application submitted in Welsh will not be treated less favourably than an application submitted in English.
Cardiff University is a signatory to the San Francisco Declaration on Research Assessment (DORA), which means that in hiring and promotion decisions we will evaluate applicants on the quality of their research, not publication metrics or the identity of the journal in which the research is published. More information is available at: Responsible research assessment - Research - Cardiff University
Job Description
Main Duties and Responsibilities
Main Function
To conduct research within GaN device technology development using state-of-the-art nano and micro engineering techniques and contribute to the overall research performance of the School and University, carrying out research leading to the publishing of high-quality research. To pursue excellence in research and to inspire others to do the same.
Research
• To conduct research within the Centre for High Frequency Engineering (CHFE) and to contribute to the overall research performance of the School and University by the production of measurable outputs including bidding for funding, publishing in national academic journals and conferences, and the recruitment and supervision of postgraduate research students.
• To develop research objectives and proposals for own or joint research including research funding proposals
• To attend and or present at conferences/seminars at a local and national level as required
• To undertake administrative tasks associated with the research project, including the planning and organisation of the project and the implementation of procedures required to ensure accurate and timely reporting
• To prepare research ethics and research governance applications as appropriate
• To review and synthesise existing research literature within the field
• To participate in School research activities.
• To build and create networks both internally and externally to the university, to influence decisions, explore future research requirements, and share research ideas for the benefit of research projects
Other
• To engage effectively with industrial, commercial and public sector organisations, professional institutions, other academic institutions etc., regionally and nationally to raise awareness of the School's profile, to cultivate strategically valuable alliances, and to pursue opportunities for collaboration across a range of activities. These activities are expected to contribute to the School and the enhancement of its regional and national profile.
• To undergo personal and professional development that is appropriate to and which will enhance performance.
• To participate in School administration and activities to promote the School and its work to the wider University and the outside world
• To develop/assist in the fabrication GaN transistor-based technology and associated passive components for MMIC applications, using micro and nano technology in a cleanroom environment.
• To be responsible for carrying out semiconductor fabrication technology development, providing feedback on epitaxy and to interact closely with device and MMIC RF characterisation and design research colleagues within the CHFE.
• To be responsible for interpretation of PCM and devices measurement data.
• To assist in the supervision and assessment of postgraduate research and undergraduate students.
• To participate in and contribute to CHFE and School research activities and seminar series and to attend and or present at conferences/seminars at a local and national level as required.
Additional Information
IMPORTANT: Evidencing Criteria
Candidates should evidence that they meet ALL of the essential criteria as well as, where relevant, the desirable criteria.
As part of the application process you will be asked to provide this evidence via a supporting statement. Please ensure when submitting this document / attaching it to your application profile you name it with the vacancy reference number, in this instance, 19353BR.
Person Specification
Essential Criteria
Qualifications and Education
1. Postgraduate degree at PhD level (or nearing completion / submission) in Electronics Compound Semiconductor Engineering area or relevant industrial experience
Knowledge, Skills and Experience
2. An established expertise and proven portfolio of research and/or relevant industrial experience within the following research fields:
a. GaN Active and Passive Devices Micro and Nano Fabrication Technology within a cleanroom environment.
b. Lithography, contact lithography and direct write
c. Plasma Process for Dry etch and Deposition.
d. Thin Film Deposition, Electroplating
e. Use of III-V or GaN Micro and Nano Fabrication Diagnostic Tools such as SEM, AFM, Ellipsometery, etc.
f. Use of Micro and Nano Technology Devices Layout Tools in the Design Process, i.e. L-Edit Tanner.
g. Knowledge of DC and RF on wafer characterisation
h. Knowledge of IV Pulse measurements
i. Knowledge of using HFSS, ADS and AWR Microwave Office Design Tool
3. Knowledge of current status of research in GaN compound semiconductor-based technologies.
4. Proven ability to publish in national/international journals and conferences and/or other research outputs in the field of GaN devices using micro and nano technology in a cleanroom environment.
5. Knowledge and understanding of competitive research funding to be able to develop applications to funding bodies.
Communication and Team Working
6. Proven ability in effective and persuasive communication
7. Ability to supervise the work of others to focus team efforts and motivate individuals and evidence of ability to undertake and deliver specific projects and supervise short term project teams.
Planning, Analysis and Problem solving
8. Evidence of ability to solve expansive problems using initiative and creativity; identify and propose both practical and innovative solutions.
Other
9. Proven ability to demonstrate creativity, innovation and team-working within work
10. Proven ability to work without close supervision
Desirable Criteria
1. Evidence of working effectively within collaborations.
2. Evidence of ability to participate in and develop both internal and external networks and utilise them to enhance the research activities of the School.
3. A willingness to take responsibility for academically related administration, and experience of working in a Higher Education environment.
Research Associate - In the area of Next Generation GaN Devices Technology Development
Cardiff School of Engineering
This role involves conducting research in the area of GaN electronic device technology development using state-of-the-art nano and micro engineering techniques and contribute to the overall research performance of the School and University, carrying out research leading to the publishing of high-quality research. To pursue excellence in research and to inspire others to do the same using Gallium Nitride RF technology platforms developed by the Centre of High Frequency Engineering (CHFE), within the School of Engineering at Cardiff University. Specifically, the role will involve the implementation, development and enhancement of electronic GaN device fabrication processes using micro- and nano-fabrication modules in the recently opened state-of-the-art Institute for Compound Semiconductors (ICS) cleanroom facility https://www.cardiff.ac.uk/institute-compound-semiconductors/industry/facilities . The role will also involve the interaction with the RF GaN characterisation and circuit design teams within Cardiff and with project partners.
This post is full time (35 hours per week) and fixed term until 20 November 2027.
Salary: £40,247 - £45,163 per annum (Grade 6). It is not expected that an appointment be made above £40,247 per annum, Point 32.
For informal enquiries about the post please contact Prof. Khaled Elgaid (ElgaidK@cardiff.ac.uk)
For further details about working at Cardiff School of Engineering please contact Bev Jones Enginadmin@cardiff.ac.uk
Date advert posted: Wednesday, 13 November 2024
Closing date: Wednesday, 27 November 2024
The School of Engineering holds an Athena SWAN Bronze Award that recognises good employment practice and a commitment to develop the careers of women working in science. Cardiff University is an equal opportunities employer and positively encourages applications from suitably qualified and eligible candidates regardless of sex, race, disability, age, sexual orientation, gender reassignment, religion or belief, marital status, or pregnancy and maternity. For this vacancy we actively encourage women to apply. We will also consider proposals for flexible working or job share opportunities.
Please be aware that Cardiff University reserves the right to close this vacancy early should sufficient applications be received.
Cardiff University is committed to supporting and promoting equality and diversity and to creating an inclusive working environment. We believe this can be achieved through attracting, developing, and retaining a diverse range of staff from many different backgrounds. We therefore welcome applicants from all sections of the community regardless of sex, ethnicity, disability, sexual orientation, trans identity, relationship status, religion or belief, caring responsibilities, or age. In supporting our employees to achieve a balance between their work and their personal lives, we will also consider proposals for flexible working or job share arrangements.
Applications may be submitted in Welsh, and an application submitted in Welsh will not be treated less favourably than an application submitted in English.
Cardiff University is a signatory to the San Francisco Declaration on Research Assessment (DORA), which means that in hiring and promotion decisions we will evaluate applicants on the quality of their research, not publication metrics or the identity of the journal in which the research is published. More information is available at: Responsible research assessment - Research - Cardiff University
Job Description
Main Duties and Responsibilities
Main Function
To conduct research within GaN device technology development using state-of-the-art nano and micro engineering techniques and contribute to the overall research performance of the School and University, carrying out research leading to the publishing of high-quality research. To pursue excellence in research and to inspire others to do the same.
Research
• To conduct research within the Centre for High Frequency Engineering (CHFE) and to contribute to the overall research performance of the School and University by the production of measurable outputs including bidding for funding, publishing in national academic journals and conferences, and the recruitment and supervision of postgraduate research students.
• To develop research objectives and proposals for own or joint research including research funding proposals
• To attend and or present at conferences/seminars at a local and national level as required
• To undertake administrative tasks associated with the research project, including the planning and organisation of the project and the implementation of procedures required to ensure accurate and timely reporting
• To prepare research ethics and research governance applications as appropriate
• To review and synthesise existing research literature within the field
• To participate in School research activities.
• To build and create networks both internally and externally to the university, to influence decisions, explore future research requirements, and share research ideas for the benefit of research projects
Other
• To engage effectively with industrial, commercial and public sector organisations, professional institutions, other academic institutions etc., regionally and nationally to raise awareness of the School's profile, to cultivate strategically valuable alliances, and to pursue opportunities for collaboration across a range of activities. These activities are expected to contribute to the School and the enhancement of its regional and national profile.
• To undergo personal and professional development that is appropriate to and which will enhance performance.
• To participate in School administration and activities to promote the School and its work to the wider University and the outside world
• To develop/assist in the fabrication GaN transistor-based technology and associated passive components for MMIC applications, using micro and nano technology in a cleanroom environment.
• To be responsible for carrying out semiconductor fabrication technology development, providing feedback on epitaxy and to interact closely with device and MMIC RF characterisation and design research colleagues within the CHFE.
• To be responsible for interpretation of PCM and devices measurement data.
• To assist in the supervision and assessment of postgraduate research and undergraduate students.
• To participate in and contribute to CHFE and School research activities and seminar series and to attend and or present at conferences/seminars at a local and national level as required.
Additional Information
IMPORTANT: Evidencing Criteria
Candidates should evidence that they meet ALL of the essential criteria as well as, where relevant, the desirable criteria.
As part of the application process you will be asked to provide this evidence via a supporting statement. Please ensure when submitting this document / attaching it to your application profile you name it with the vacancy reference number, in this instance, 19353BR.
Person Specification
Essential Criteria
Qualifications and Education
1. Postgraduate degree at PhD level (or nearing completion / submission) in Electronics Compound Semiconductor Engineering area or relevant industrial experience
Knowledge, Skills and Experience
2. An established expertise and proven portfolio of research and/or relevant industrial experience within the following research fields:
a. GaN Active and Passive Devices Micro and Nano Fabrication Technology within a cleanroom environment.
b. Lithography, contact lithography and direct write
c. Plasma Process for Dry etch and Deposition.
d. Thin Film Deposition, Electroplating
e. Use of III-V or GaN Micro and Nano Fabrication Diagnostic Tools such as SEM, AFM, Ellipsometery, etc.
f. Use of Micro and Nano Technology Devices Layout Tools in the Design Process, i.e. L-Edit Tanner.
g. Knowledge of DC and RF on wafer characterisation
h. Knowledge of IV Pulse measurements
i. Knowledge of using HFSS, ADS and AWR Microwave Office Design Tool
3. Knowledge of current status of research in GaN compound semiconductor-based technologies.
4. Proven ability to publish in national/international journals and conferences and/or other research outputs in the field of GaN devices using micro and nano technology in a cleanroom environment.
5. Knowledge and understanding of competitive research funding to be able to develop applications to funding bodies.
Communication and Team Working
6. Proven ability in effective and persuasive communication
7. Ability to supervise the work of others to focus team efforts and motivate individuals and evidence of ability to undertake and deliver specific projects and supervise short term project teams.
Planning, Analysis and Problem solving
8. Evidence of ability to solve expansive problems using initiative and creativity; identify and propose both practical and innovative solutions.
Other
9. Proven ability to demonstrate creativity, innovation and team-working within work
10. Proven ability to work without close supervision
Desirable Criteria
1. Evidence of working effectively within collaborations.
2. Evidence of ability to participate in and develop both internal and external networks and utilise them to enhance the research activities of the School.
3. A willingness to take responsibility for academically related administration, and experience of working in a Higher Education environment.
JOB SUMMARY
Research Associate - Next Generation GaN DevicesCardiff University
Cardiff
8 days ago
N/A
Full-time